AO3424

Specifications

Terminal Sayısı

3

Maks. Çalışma Sıcaklığı

150 °C

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs Max

±12V

Gate Charge Qg Max Vgs

3.2nC @ 4.5V

Power Dissipation

1.4 W

Yayın Yılı

2009

Gate To Source Voltage Vgs

12 V

Montaj Tipi

Surface Mount

Current Continuous Drain Id25

3.8A Ta

Min. Çalışma Sıcaklığı

-55 °C

Number Of Channels

1

Vgsth Max Id

1.8V @ 250μA

Ambalaj

Cut Tape (CT)

Schedule B

8541290080

Input Capacitance Ciss Max Vds

270pF @ 15V

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

RoHS

Compliant

Threshold Voltage

1 V

Drain To Source Breakdown Voltage

30 V

Drive Voltage Max Rds On Min Rds On

2.5V 10V

Drain To Source Voltage Vdss

30 V

Turn Off Delay Time

17.5 ns

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Rds On Max

80 mΩ

Feedback Capmax Crss

25 pF

Power Dissipation Max

1.4W Ta

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz Kodu

yes

Turn On Delay Time

3.5 ns

Yükseklik

1.25 mm

Rds On Max Id Vgs

80m Ω @ 2A, 10V

Input Capacitance

270 pF

Fet Type

N-Channel

Number Of Elements

1

Lifecycle Status

NRND (Last Updated: 4 years ago)

Casepackage

TO-236-3

Max Junction Temperature Tj

150 °C

Pin Sayısı

3