AON7530

Specifications

Maximum Idss Ua

1

Çalışma Sıcaklığı

-55°C ~ 150°C

Rds On Max Id Vgs

4.7mOhm @ 20A, 10V

Ppap

Unknown

Category

Power MOSFET

Package Width

3

Process Technology

AlphaMOS

Temel Ürün No

AON75

Maximum Gate Source Voltage V

±20

Channel Type

N

Eu Rohs

Compliant

Current Continuous Drain Id25

24A (Ta), 30A (Tc)

Power Dissipation Max

24W

Gate Charge Qg Max Vgs

18.8 nC @ 10 V

Maximum Drain Source Resistance Mohm

4.7@10V

Tedarikçi Cihaz Paketi

8-DFN-EP (3x3)

Maximum Power Dissipation Mw

4100

Maximum Continuous Drain Current A

30

Typical Fall Time Ns

4

Minimum Operating Temperature C

-55

Parça Durumu

NRND

Maximum Gate Threshold Voltage V

2.2

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Typical Rise Time Ns

3

Channel Mode

Enhancement

Pcb Changed

8

Fet Type

N-Channel

Typical Gate Charge Vgs Nc

18.8@10V|8.8@4.5V

Drain To Source Voltage Vdss

30 V

Configuration

Single Quad Drain Triple Source

Package Length

3

Typical Turnon Delay Time Ns

7

Montaj Tipi

Surface Mount

Number Of Elements Per Chip

1

Paket

Tape & Reel (TR)

Vgs Max

±20V

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

1320 pF @ 15 V

Typical Input Capacitance Vds Pf

1320@15V

Maximum Drain Source Voltage V

30