AON3611_101

Specifications

Number Of Elements Per Chip

2

Typical Turnoff Delay Time Ns

18.5@N Channel|19@P Channel

Eu Rohs

Compliant

Typical Gate Charge10v Nc

4.05@N Channel|9.2@P Channel

Channel Type

N|P

Typical Input Capacitance Vds Pf

170@15V@N Channel|520@15V@P Channel

Maximum Drain Source Voltage V

30

Maximum Gate Source Voltage V

±20

Channel Mode

Enhancement

Typical Rise Time Ns

1.5@N Channel|5.5@P Channel

Minimum Operating Temperature C

-55

Typical Fall Time Ns

15.5@N Channel|7@P Channel

Maximum Continuous Drain Current A

5@N Channel|6@P Channel

Maximum Power Dissipation Mw

2100@N Channel|2500@P Channel

Typical Gate Charge Vgs Nc

4.05@10V|2@4.5V@N Channel|9.2@10V|4.6@4.5V@P Channel

Maximum Drain Source Resistance Mohm

38@10V@P Channel|50@10V@N Channel

Maximum Operating Temperature C

150

Eccn Us

EAR99

Typical Turnon Delay Time Ns

4.5@N Channel|7.5@P Channel

Category

Power MOSFET

Configuration

Dual Dual Drain