AO6N7S60

Specifications

Rad Hardened

No

Automotive

Unknown

Polarity

N

Typical Gate Charge Vgs Nc

8.2@10V

Ppap

Unknown

Package Length

5.2

Drainsource Onvolt

600(V)

Lead Shape

No Lead

Package Width

5.55

Supplier Package

DFN EP

Maximum Drain Source Voltage V

600

Channel Type

N

Maximum Continuous Drain Current A

7

Mounting

Surface Mount

Category

Power MOSFET

Package Type

DFN EP

Minimum Operating Temperature C

-55

Eu Rohs

Compliant

Hts

8541.29.00.95

Typical Gate Charge10v Nc

8.2

Maximum Power Dissipation Mw

104000

Gatesource Voltage Max

±30(V)

Typical Turnon Delay Time Ns

19

Configuration

Single Quad Drain Triple Source

Typical Rise Time Ns

13

Operating Temperature Classification

Military

Power Dissipation

104(W)

Package Height

0.95(Max)

Process Technology

AlphaMOS

Maximum Gate Threshold Voltage V

3.9

Maximum Idss Ua

1

Maximum Operating Temperature C

150

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

372@100V

Pcb Changed

8

Parça Durumu

Unconfirmed

Tip

Power MOSFET

Maximum Gate Source Leakage Current Na

100

Eccn Us

EAR99

Continuous Drain Current

7(A)