+90 533 300 32 01
C3 ChipZentronix
AS6C8008-55ZIN

Alliance Memory, Inc.

AS6C8008-55ZIN

Memory

RoHS: Compliant

Request a quote for pricing

Priced by quantity and lead time.

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Memory Types
Volatile
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Süresi (maks. sn)
40
Memory Format
SRAM
Operating Supply Voltage
3V
Standby Voltagemin
2V
Fabrika Tedarik Süresi
8 Weeks
Kurşunsuz
Lead Free
Usage Level
Industrial grade
Density
8 Mb
Besleme Gerilimi
2.7V~5.5V
Reach Svhc
No SVHC
Power Supplies
3/5V
Supply Voltagemax Vsup
5.5V
Standby Currentmax
0.00005A
Montaj Tipi
Surface Mount
Kılıf / Paket
44-TSOP (0.400, 10.16mm Width)
Ambalaj
Tray
Kurşunsuz Kodu
yes
Nem Hassasiyeti (MSL)
3 (168 Hours)
Besleme Gerilimi
3V
Uzunluk
18.42mm
Yükseklik
1mm
Io Type
COMMON
Number Of Ports
1
Yayın Yılı
2008
Terminal Pozisyonu
DUAL
Tepe Reflow Sıcaklığı (°C)
260
Radyasyon Dayanımı
No
Address Bus Width
20b
Pin Sayısı
44
Fonksiyon Sayısı
1
Memory Interface
Parallel
Genişlik
10.16mm
Memory Size
8Mb 1M x 8
Max Supply Current
60mA
Access Time Max
55 ns
Output Characteristics
3-STATE
Write Cycle Time Word Page
55ns
Pin Sayısı
44

Related Products

  • Microchip Technology

    11AA010-I/MS

    Memory
  • Microchip Technology

    11AA010-I/P

    Memory
  • Microchip Technology

    11AA010-I/SN

    Memory
  • Microchip Technology

    11AA010-I/TO

    Memory
  • Microchip Technology

    11AA010T-I/MNY

    Memory
  • Microchip Technology

    11AA010T-I/MS

    Memory
  • Microchip Technology

    11AA010T-I/SN

    Memory
  • Microchip Technology

    11AA010T-I/TT

    Memory
  • Fast Delivery

    Same-day prep and shipping from stock

    Genuine Parts

    Sourced from authorized channels

    Datasheet

    Technical documents for each part

    Technical Support

    Help before and after the sale