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C3 ChipZentronix
AS6C1008-55SIN

Alliance Memory, Inc.

AS6C1008-55SIN

Memory

RoHS: Compliant

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Compliant

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Specifications

Address Bus Width
17b
Pin Sayısı
32
Fonksiyon Sayısı
1
Memory Interface
Parallel
Genişlik
11.3mm
Memory Size
1Mb 128K x 8
Max Supply Current
60mA
Yayın Yılı
2006
Terminal Pozisyonu
DUAL
JESD-609 Kodu
e3
Radyasyon Dayanımı
No
Supply Voltagemin Vsup
2.7V
Çalışma Sıcaklığı
-40°C~85°C TA
Montaj
Surface Mount
Terminal Sayısı
32
Access Time Max
55 ns
Output Characteristics
3-STATE
Write Cycle Time Word Page
55ns
Pin Sayısı
32
Parça Durumu
Active
Memory Format
SRAM
Operating Supply Voltage
3V
Fabrika Tedarik Süresi
8 Weeks
Kurşunsuz
Lead Free
Usage Level
Industrial grade
Density
1 Mb
Besleme Gerilimi
2.7V~5.5V
Terminal Kaplaması
Tin (Sn)
Memory Types
Volatile
RoHS Durumu
ROHS3 Compliant
Ambalaj
Tube
Kurşunsuz Kodu
yes
Nem Hassasiyeti (MSL)
3 (168 Hours)
Besleme Gerilimi
3V
Uzunluk
20.75mm
Yükseklik
2.82mm
Io Type
COMMON
Number Of Ports
1
Reach Svhc
No SVHC
Supply Voltagemax Vsup
5.5V

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