SKI10297

Specifications

Maximum Gate Source Voltage V

±20

Typical Gate Charge10v Nc

36.5

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

28.8@10V

Maximum Gate Threshold Voltage V

2.5

Eu Rohs

Compliant with Exemption

Parça Durumu

Obsolete

Typical Fall Time Ns

9.4

Maximum Power Dissipation Mw

90000

Eccn Us

EAR99

Process Technology

TMOS

Maximum Idss Ua

100

Channel Type

N

Typical Rise Time Ns

4.4

Typical Input Capacitance Vds Pf

2540@25V

Configuration

Single Dual Drain

Maximum Continuous Drain Current A

34

Minimum Operating Temperature C

-55

Maximum Operating Temperature C

150

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

100

Category

Power MOSFET

Typical Turnon Delay Time Ns

4.7

Typical Gate Charge Vgs Nc

16.9@4.5V|36.5@10V

Typical Turnoff Delay Time Ns

21.9

Maximum Gate Source Leakage Current Na

100