SKI10195

Specifications

Channel Type

N

Typical Rise Time Ns

6.5

Typical Input Capacitance Vds Pf

3990@25V

Eccn Us

EAR99

Maximum Idss Ua

100

Process Technology

TMOS

Tab

Tab

Supplier Package

D2PAK

Package Length

9.9

Maximum Power Dissipation Mw

116000

Typical Fall Time Ns

13.9

Maximum Gate Threshold Voltage V

2.5

Eu Rohs

Compliant with Exemption

Parça Durumu

Obsolete

Typical Gate Charge10v Nc

57.7

Channel Mode

Enhancement

Ppap

No

Pcb Changed

2

Maximum Drain Source Resistance Mohm

18.4@10V

Maximum Gate Source Voltage V

±20

Maximum Gate Source Leakage Current Na

100

Typical Gate Charge Vgs Nc

57.7@10V|27.1@4.5V

Typical Turnoff Delay Time Ns

34.2

Package Height

4.5

Typical Turnon Delay Time Ns

7

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

100

Category

Power MOSFET

Maximum Continuous Drain Current A

47

Standard Package Name

TO-263

Minimum Operating Temperature C

-55

Package Width

9.2

Pin Sayısı

3

Maximum Operating Temperature C

150

Mounting

Surface Mount

Hts

8541.29.00.95

Configuration

Single Dual Drain

Automotive

No

Lead Shape

Gull-wing