GKI04101

Specifications

Typical Input Capacitance Vds Pf

990@25V

Channel Type

N

Maximum Gate Threshold Voltage V

2.5

Maximum Power Dissipation Mw

3100

Maximum Operating Temperature C

150

Typical Gate Charge10v Nc

13.3

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

4.7

Minimum Operating Temperature C

-55

Maximum Idss Ua

100

Parça Durumu

Active

Hts

8541.29.00.95

Maximum Drain Source Voltage V

40

Typical Turnon Delay Time Ns

1.6

Channel Mode

Enhancement

Configuration

Single Quad Drain Triple Source

Maximum Continuous Drain Current A

9

Number Of Elements Per Chip

1

Maximum Gate Source Voltage V

±20

Typical Rise Time Ns

2.2

Category

Power MOSFET

Maximum Drain Source Resistance Mohm

11.6@10V

Process Technology

TMOS

Typical Turnoff Delay Time Ns

9.6

Eccn Us

EAR99

Maximum Gate Source Leakage Current Na

100

Typical Gate Charge Vgs Nc

5.1@4.5V|13.3@10V