GKI04076

Specifications

Channel Type

N

Typical Input Capacitance Vds Pf

1470@25V

Maximum Power Dissipation Mw

3100

Maximum Gate Threshold Voltage V

2.5

Typical Fall Time Ns

7.1

Eu Rohs

Compliant with Exemption

Typical Gate Charge10v Nc

18.5

Maximum Operating Temperature C

150

Parça Durumu

Active

Maximum Idss Ua

100

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

40

Typical Turnon Delay Time Ns

2.5

Configuration

Single Quad Drain Triple Source

Channel Mode

Enhancement

Maximum Continuous Drain Current A

11

Maximum Gate Source Voltage V

±20

Number Of Elements Per Chip

1

Typical Rise Time Ns

3.4

Category

Power MOSFET

Process Technology

TMOS

Maximum Drain Source Resistance Mohm

8.9@10V

Eccn Us

EAR99

Typical Turnoff Delay Time Ns

12.5

Typical Gate Charge Vgs Nc

18.5@10V|7.9@4.5V

Maximum Gate Source Leakage Current Na

100