GKI04048

Specifications

Typical Gate Charge Vgs Nc

35@10V|16@4.5V

Maximum Gate Source Leakage Current Na

100

Eccn Us

EAR99

Typical Turnoff Delay Time Ns

19.7

Maximum Drain Source Resistance Mohm

5.4@10V

Process Technology

TMOS

Category

Power MOSFET

Typical Rise Time Ns

5.6

Number Of Elements Per Chip

1

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

14

Channel Mode

Enhancement

Configuration

Single Quad Drain Triple Source

Typical Turnon Delay Time Ns

4.1

Maximum Drain Source Voltage V

40

Maximum Idss Ua

100

Minimum Operating Temperature C

-55

Parça Durumu

Active

Maximum Operating Temperature C

150

Typical Gate Charge10v Nc

35

Typical Fall Time Ns

11.9

Eu Rohs

Compliant with Exemption

Maximum Gate Threshold Voltage V

2.5

Maximum Power Dissipation Mw

3100

Typical Input Capacitance Vds Pf

2410@25V

Channel Type

N