EKI07174

Specifications

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

4.5

Maximum Idss Ua

100

Maximum Continuous Drain Current A

46

Configuration

Single Dual Drain

Typical Gate Charge Vgs Nc

33@10V|15@4.5V

Category

Power MOSFET

Typical Rise Time Ns

4.2

Typical Input Capacitance Vds Pf

2520@25V

Typical Turnoff Delay Time Ns

19.4

Typical Gate Charge10v Nc

33

Maximum Gate Source Voltage V

±20

Maximum Operating Temperature C

150

Channel Type

N

Channel Mode

Enhancement

Maximum Gate Threshold Voltage V

2.5

Maximum Drain Source Resistance Mohm

14.1@10V

Typical Fall Time Ns

8.7

Parça Durumu

NRND

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

75

Process Technology

TMOS

Minimum Operating Temperature C

-55

Eccn Us

EAR99

Maximum Power Dissipation Mw

90000

Hts

8541.29.00.95

Maximum Gate Source Leakage Current Na

100