EKI04047

Specifications

Maximum Gate Source Voltage V

±20

Typical Gate Charge10v Nc

35

Typical Input Capacitance Vds Pf

2410@25V

Typical Turnoff Delay Time Ns

19.7

Category

Power MOSFET

Typical Rise Time Ns

5.6

Typical Gate Charge Vgs Nc

16@4.5V|35@10V

Configuration

Single Dual Drain

Maximum Continuous Drain Current A

80

Maximum Idss Ua

100

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

4.1

Maximum Gate Source Leakage Current Na

100

Eccn Us

EAR99

Maximum Power Dissipation Mw

90000

Process Technology

TMOS

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

40

Parça Durumu

NRND

Number Of Elements Per Chip

1

Typical Fall Time Ns

11.9

Maximum Drain Source Resistance Mohm

5.2@10V

Maximum Gate Threshold Voltage V

2.5

Channel Mode

Enhancement

Channel Type

N

Maximum Operating Temperature C

150