EKI04036

Specifications

Maximum Continuous Drain Current A

80

Configuration

Single Dual Drain

Typical Turnon Delay Time Ns

6.2

Eu Rohs

Compliant with Exemption

Maximum Idss Ua

100

Typical Turnoff Delay Time Ns

28.9

Typical Input Capacitance Vds Pf

3910@25V

Maximum Gate Source Voltage V

±20

Typical Gate Charge10v Nc

56.1

Typical Gate Charge Vgs Nc

26.4@4.5V|56.1@10V

Category

Power MOSFET

Typical Rise Time Ns

8.4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage V

2.5

Maximum Drain Source Resistance Mohm

3.9@10V

Typical Fall Time Ns

17.9

Maximum Operating Temperature C

150

Channel Type

N

Maximum Power Dissipation Mw

116000

Eccn Us

EAR99

Maximum Gate Source Leakage Current Na

100

Number Of Elements Per Chip

1

Parça Durumu

NRND

Maximum Drain Source Voltage V

40

Minimum Operating Temperature C

-55

Process Technology

TMOS