DKI10751

Specifications

Eccn Us

EAR99

Number Of Elements Per Chip

1

Maximum Drain Source Resistance Mohm

72.6@10V

Channel Type

N

Channel Mode

Enhancement

Typical Gate Charge10v Nc

14.7

Maximum Drain Source Voltage V

100

Configuration

Single Dual Drain

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

1050@25V

Maximum Idss Ua

100

Maximum Gate Threshold Voltage V

2.5

Maximum Operating Temperature C

150

Typical Fall Time Ns

4.2

Typical Turnoff Delay Time Ns

11.1

Typical Turnon Delay Time Ns

2.1

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

15

Maximum Power Dissipation Mw

32000

Parça Durumu

Active

Category

Power MOSFET

Typical Rise Time Ns

2

Typical Gate Charge Vgs Nc

14.7@10V|6.5@4.5V

Process Technology

TMOS

Eu Rohs

Compliant with Exemption

Maximum Gate Source Leakage Current Na

100