DKI06261

Specifications

Eu Rohs

Compliant with Exemption

Maximum Gate Source Leakage Current Na

100

Typical Rise Time Ns

2.3

Typical Gate Charge Vgs Nc

14.7@10V|6.6@4.5V

Process Technology

TMOS

Category

Power MOSFET

Maximum Continuous Drain Current A

25

Maximum Power Dissipation Mw

32000

Parça Durumu

Active

Minimum Operating Temperature C

-55

Typical Turnon Delay Time Ns

1.9

Maximum Operating Temperature C

150

Typical Fall Time Ns

5

Typical Turnoff Delay Time Ns

10.9

Typical Input Capacitance Vds Pf

1050@25V

Maximum Idss Ua

100

Maximum Gate Threshold Voltage V

2.5

Configuration

Single Dual Drain

Maximum Drain Source Voltage V

60

Maximum Gate Source Voltage V

±20

Channel Type

N

Typical Gate Charge10v Nc

14.7

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

21.9@10V

Eccn Us

EAR99

Number Of Elements Per Chip

1