DKI04077

Specifications

Maximum Drain Source Resistance Mohm

8.9@10V

Eccn Us

EAR99

Number Of Elements Per Chip

1

Channel Mode

Enhancement

Typical Gate Charge10v Nc

18.5

Channel Type

N

Maximum Gate Threshold Voltage V

2.5

Maximum Idss Ua

100

Typical Input Capacitance Vds Pf

1470@25V

Maximum Drain Source Voltage V

40

Configuration

Single Dual Drain

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time Ns

2.5

Typical Fall Time Ns

7.1

Typical Turnoff Delay Time Ns

12.5

Maximum Operating Temperature C

150

Minimum Operating Temperature C

-55

Parça Durumu

Active

Maximum Continuous Drain Current A

47

Maximum Power Dissipation Mw

37000

Category

Power MOSFET

Maximum Gate Source Leakage Current Na

100

Eu Rohs

Compliant with Exemption

Process Technology

TMOS

Typical Rise Time Ns

3.4

Typical Gate Charge Vgs Nc

7.9@4.5V|18.5@10V