VSM-06-20-100-50-06-N1

Specifications

Transistor Type

1 N-Channel

Qg Gate Charge

23 nC

Yükseklik

1.1 mm

Genişlik

8 mm

Vgs Gatesource Voltage

- 20 V, + 20 V

Uzunluk

8 mm

Montaj Stili

SMD/SMT

Typical Turnon Delay Time

10 ns

Vds Drainsource Breakdown Voltage

650 V

Maks. Çalışma Sıcaklığı

+ 150 C

Id Continuous Drain Current

7 A

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

RoHS

Details

Fabrika Paket Adedi

3000

Tradename

CoolMOS

Minimum Operating Temperature

- 40 C

Moisture Sensitive

Yes

Pd Power Dissipation

63 W

Configuration

Single

Seri

CoolMOS E6

Kılıf / Paket

VSON-4

Ambalaj

MouseReel

Ürün Tipi

MOSFET

Rds On Drainsource Resistance

594 mOhms

Number Of Channels

1 Channel

Technology

Si

Rise Time

8 ns

Typical Turnoff Delay Time

64 ns

Channel Mode

Enhancement

Part Aliases

SP000895212 IPL65R660E6AUMA1

Birim Ağırlık

0.006619 oz