Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 8
- Configuration
- SINGLE
- Noise Figure
- 1.5dB
- Voltage Rated Dc
- 4.5V
- Case Connection
- SOURCE
- Montaj
- Surface Mount
- Yayın Yılı
- 2014
- Kılıf / Paket
- 8-WFDFN Exposed Pad
- Parça Durumu
- Obsolete
- Fabrika Tedarik Süresi
- 12 Weeks
- Maks. Çalışma Sıcaklığı
- 150°C
- Power Output
- 26.5dBm
- JESD-609 Kodu
- e3
- Transistor Type
- pHEMT FET
- Number Of Elements
- 1
- Ambalaj
- Tape & Reel (TR)
- Gain
- 17 dB
- Terminal Kaplaması
- Matte Tin (Sn)
- Akım Değeri
- 200 mA
- RoHS Durumu
- RoHS Compliant
- Ds Breakdown Voltagemin
- 7V
- Radyasyon Dayanımı
- No
- Power Dissipation
- 1.5 W
- Voltage Rating Dc
- 4.5 V
- Transistor Application
- AMPLIFIER
- Current Test
- 200mA
- Operating Mode
- ENHANCEMENT MODE
- Terminal Sayısı
- 8
- Terminal Pozisyonu
- DUAL
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 1V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 1.5W
- Fet Technology
- HIGH ELECTRON MOBILITY
- Drain To Source Voltage Vdss
- 7 V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Jedec95 Code
- MO-229
- Min. Çalışma Sıcaklığı
- -65°C
- Frekans
- 2GHz
- Continuous Drain Current Id
- 500 mA
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