AP2309AGN-HF

Specifications

Ds Breakdown Voltagemin

30 V

Ihs Manufacturer

ADVANCED POWER ELECTRONICS CORP

Yüzey Montaj

YES

Drain Currentmax Id

3.4 A

Drainsource On Resistancemax

0.075 Ω

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PDSO-G3

Number Of Elements

1

Package Shape

RECTANGULAR

Jesd30 Code

R-PDSO-G3

Package Style

SMALL OUTLINE

Transistor Element Material

SILICON

Power Dissipationmax Abs

1.38 W

Part Life Cycle Code

Contact Manufacturer

Rohs Code

Yes

Pulsed Drain Currentmax Idm

12 A

Operating Mode

ENHANCEMENT MODE

Number Of Terminals

3

Operating Temperaturemax

150 °C

Terminal Formu

GULL WING

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

compliant

Pin Sayısı

3

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Configuration

SINGLE WITH BUILT-IN DIODE

Polaritychannel Type

P-CHANNEL

Terminal Pozisyonu

DUAL