AP18T10GJ

Specifications

Number Of Elements

1

Drainsource On Resistancemax

0.16 Ω

Pulsed Drain Currentmax Idm

30 A

Package Shape

RECTANGULAR

Fet Technology

METAL-OXIDE SEMICONDUCTOR

REACH Uyumluluk Kodu

compliant

Package Description

ROHS COMPLIANT PACKAGE-3

Part Package Code

TO-251

Yüzey Montaj

NO

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Jesd30 Code

R-PSIP-T3

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

100 V

Terminal Pozisyonu

SINGLE

Operating Temperaturemax

150 °C

Package Style

IN-LINE

Transistor Element Material

SILICON

Ihs Manufacturer

ADVANCED POWER ELECTRONICS CORP

Qualification Status

Not Qualified

Number Of Terminals

3

Part Life Cycle Code

Obsolete

Polaritychannel Type

N-CHANNEL

Terminal Formu

THROUGH-HOLE

Drain Currentmax Id

9 A

Package Body Material

PLASTIC/EPOXY

Jedec95 Code

TO-251

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING