AP18P10GJ

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Ihs Manufacturer

ADVANCED POWER ELECTRONICS CORP

Part Life Cycle Code

Contact Manufacturer

Qualification Status

Not Qualified

Number Of Terminals

3

Polaritychannel Type

P-CHANNEL

Terminal Formu

THROUGH-HOLE

Drain Currentmax Id

12 A

Jedec95 Code

TO-251

Package Body Material

PLASTIC/EPOXY

Pin Sayısı

3

Jesd30 Code

R-PSIP-T3

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

100 V

Operating Temperaturemax

150 °C

Package Style

IN-LINE

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Number Of Elements

1

Drainsource On Resistancemax

0.18 Ω

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

48 A

Package Shape

RECTANGULAR

Package Description

IN-LINE, R-PSIP-T3

REACH Uyumluluk Kodu

compliant

Part Package Code

TO-251

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

NO