AP13N50W

Specifications

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Pulsed Drain Currentmax Idm

50 A

Polaritychannel Type

N-CHANNEL

ECCN Kodu

EAR99

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Ihs Manufacturer

ADVANCED POWER ELECTRONICS CORP

Yüzey Montaj

NO

Package Style

FLANGE MOUNT

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

3

Drain Currentmax Id

14 A

Operating Temperaturemax

150 °C

Transistor Application

SWITCHING

Jesd30 Code

R-PSFM-T3

Part Package Code

TO-3P

REACH Uyumluluk Kodu

compliant

Part Life Cycle Code

Obsolete

Drainsource On Resistancemax

0.52 Ω

Qualification Status

Not Qualified

Package Description

ROHS COMPLIANT, TO-3P, 3 PIN

Ds Breakdown Voltagemin

500 V

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Pin Sayısı

3

Terminal Formu

THROUGH-HOLE

Configuration

SINGLE WITH BUILT-IN DIODE