Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 2.5pF @ 5V
- Rds On Max Id Vgs
- 500 Ω @ 5.9V
- Kılıf / Paket
- 8-DIP (0.300, 7.62mm)
- Fet Feature
- Standard
- Ambalaj
- Tube
- Power Dissipation
- 500mW
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 10.6V
- Çalışma Sıcaklığı
- 0°C~70°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 3.35V @ 1μA
- ECCN Kodu
- EAR99
- Montaj Tipi
- Through Hole
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Fet Type
- 2 N-Channel (Dual) Matched Pair
- Fabrika Tedarik Süresi
- 8 Weeks
- Terminal Sayısı
- 8
- Continuous Drain Current Id
- 6.9mA
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2006
- Seri
- EPAD®
- Turn Off Delay Time
- 10 ns
- RoHS Durumu
- ROHS3 Compliant
- Max Power Dissipation
- 500mW
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration
- Dual
- Kurşunsuz Kodu
- yes
- Drain To Source Breakdown Voltage
- 10V
- Montaj
- Through Hole
- REACH Uyumluluk Kodu
- unknown
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
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