Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 6.9mA
- Operating Mode
- ENHANCEMENT MODE
- Seri
- EPAD®
- Yayın Yılı
- 2006
- Turn Off Delay Time
- 10 ns
- Transistor Element Material
- SILICON
- Fet Type
- 2 N-Channel (Dual) Matched Pair
- Fabrika Tedarik Süresi
- 10 Weeks
- Terminal Sayısı
- 8
- Drain To Source Breakdown Voltage
- 10V
- Terminal Formu
- GULL WING
- REACH Uyumluluk Kodu
- unknown
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- RoHS Durumu
- RoHS Compliant
- Max Power Dissipation
- 500mW
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration
- Dual
- Kurşunsuz Kodu
- yes
- Fet Feature
- Standard
- Ambalaj
- Tube
- Parça Durumu
- Obsolete
- Power Dissipation
- 500mW
- Gate To Source Voltage Vgs
- 10.6V
- Rds On Max Id Vgs
- 500 Ω @ 5.9V
- Input Capacitance Ciss Max Vds
- 2.5pF @ 5V
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
- Number Of Elements
- 2
- Jesd30 Code
- R-PDSO-G8
- Çalışma Sıcaklığı
- 0°C~70°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 3.35V @ 1μA
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