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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 2mA
- Yayın Yılı
- 2005
- Configuration
- COMMON SUBSTRATE, 2 ELEMENTS
- Fet Type
- 2 P-Channel (Dual) Matched Pair
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 8
- Fabrika Tedarik Süresi
- 8 Weeks
- Drain To Source Breakdown Voltage
- -12V
- Terminal Formu
- GULL WING
- REACH Uyumluluk Kodu
- unknown
- Montaj
- Surface Mount
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 500mW
- RoHS Durumu
- ROHS3 Compliant
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz Kodu
- yes
- Drain To Source Voltage Vdss
- 10.6V
- Fet Feature
- Standard
- Ambalaj
- Tube
- Gate To Source Voltage Vgs
- -13.2V
- Power Dissipation
- 500mW
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 1800 Ω @ 5V
- Input Capacitance Ciss Max Vds
- 3pF @ 5V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Number Of Elements
- 2
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
- Çalışma Sıcaklığı
- 0°C~70°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 1V @ 1μA
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