Volume pricing
- 1+ pcs$5.69
- 10+ pcs$5.37
- 100+ pcs$5.06
- 500+ pcs$4.78
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 1V @ 1μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- 0°C~70°C TJ
- Number Of Elements
- 2
- ECCN Kodu
- EAR99
- Montaj Tipi
- Through Hole
- Kılıf / Paket
- 8-DIP (0.300, 7.62mm)
- Drainsource On Resistancemax
- 500Ohm
- Input Capacitance Ciss Max Vds
- 3pF @ 5V
- Rds On Max Id Vgs
- 1800 Ω @ 5V
- Gate To Source Voltage Vgs
- 13.2V
- Parça Durumu
- Active
- Power Dissipation
- 500mW
- Drain To Source Voltage Vdss
- 10.6V
- Fet Feature
- Standard
- Ambalaj
- Tube
- Kurşunsuz Kodu
- yes
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Element Configuration
- Dual
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation
- 500mW
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Montaj
- Through Hole
- REACH Uyumluluk Kodu
- unknown
- Drain To Source Breakdown Voltage
- -12V
- Terminal Sayısı
- 8
- Fabrika Tedarik Süresi
- 8 Weeks
- Fet Type
- N and P-Channel Complementary
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2006
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 2mA
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