+90 533 300 32 01
C3 ChipZentronix

Advanced

TPV8100B

RF BJT Transistors

RoHS: Compliant

Request a quote for pricing

Priced by quantity and lead time.

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Dc Collectorbase Gain Hfe Min
30
RoHS
Details
Tolerans
±0.5%
Seri
Military, MIL-PRF-55182/01, RNC55
Collector Emitter Voltage Vceo Max
30 V
Transistor Polarity
NPN
Failure Rate
R (0.01%)
Pd Power Dissipation
215 W
Terminal Sayısı
2
Direnç
14.7 kOhms
Kılıf / Paket
Axial
Continuous Collector Current
12 A
Maks. Çalışma Sıcaklığı
+ 200 C
Ambalaj
Bulk
Montaj Stili
Screw Mount
Parça Durumu
Active
Güç (Watt)
0.125W, 1/8W
Özellikler
Military, Moisture Resistant, Weldable
Composition
Metal Film
Temperature Coefficient
±25ppm/°C
Technology
Si
Tip
RF Bipolar Power
Boyut / Ölçü
0.094 Dia x 0.250 L (2.39mm x 6.35mm)
Ürün Tipi
RF Bipolar Transistors
Transistor Type
Bipolar Power
Tedarikçi Cihaz Paketi
Axial
Minimum Operating Temperature
- 65 C
Çalışma Sıcaklığı
-65°C ~ 175°C
Emitter Base Voltage Vebo
4 V
Operating Frequency
860 MHz

Related Products

  • Microsemi Corporation

    0204-125

    RF BJT Transistors
  • Microsemi Corporation

    0510-50A

    RF BJT Transistors
  • HARTING

    09022326834

    RF BJT Transistors
  • HARTING

    09023646919

    RF BJT Transistors
  • HARTING

    09030006246

    RF BJT Transistors
  • HARTING

    09030006247

    RF BJT Transistors
  • HARTING

    09031466903

    RF BJT Transistors
  • HARTING

    09032322850222

    RF BJT Transistors
  • Fast Delivery

    Same-day prep and shipping from stock

    Genuine Parts

    Sourced from authorized channels

    Datasheet

    Technical documents for each part

    Technical Support

    Help before and after the sale