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TH430

RF BJT Transistors

RoHS: Compliant

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Specifications

Minimum Operating Temperature
- 65 C
Ambalaj
Tray
Operating Frequency
30 MHz
Emitter Base Voltage Vebo
4 V
Ürün Tipi
RF Bipolar Transistors
Pd Power Dissipation
330 W
Kılıf / Paket
M177
Maks. Çalışma Sıcaklığı
+ 200 C
Transistor Type
Bipolar Power
Continuous Collector Current
40 A
Collector Emitter Voltage Vceo Max
55 V
Technology
Si
Fabrika Paket Adedi
1
Tip
RF Bipolar Power
Birim Ağırlık
0.723969 oz
Transistor Polarity
NPN
Montaj Stili
Screw Mount
Dc Collectorbase Gain Hfe Min
15
RoHS
Compliant

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