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Specifications
- Tip
- RF Bipolar Power
- Technology
- Si
- Ürün Tipi
- RF Bipolar Transistors
- Operating Frequency
- 860 MHz
- Pd Power Dissipation
- 155 W
- Ambalaj
- Tray
- Minimum Operating Temperature
- - 55 C
- Dc Collectorbase Gain Hfe Min
- 10
- RoHS
- Details
- Maks. Çalışma Sıcaklığı
- + 200 C
- Continuous Collector Current
- 8 A
- Transistor Type
- Bipolar Power
- Kılıf / Paket
- M173
- Montaj Stili
- Screw Mount
- Emitter Base Voltage Vebo
- 3 V
- Transistor Polarity
- NPN
- Collector Emitter Voltage Vceo Max
- 30 V
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