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RoHS
Compliant
Support
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Specifications
- Transistor Type
- Bipolar
- Maks. Çalışma Sıcaklığı
- + 200 C
- Continuous Collector Current
- 20 A
- Collector Emitter Voltage Vceo Max
- 35 V
- Montaj Stili
- Through Hole
- Transistor Polarity
- NPN
- Emitter Base Voltage Vebo
- 4 V
- Kılıf / Paket
- FLG-4
- Pd Power Dissipation
- 270 W
- Operating Frequency
- 30 MHz
- Ürün Tipi
- RF Bipolar Transistors
- Fabrika Paket Adedi
- 1
- Technology
- Si
- RoHS
- Details
- Dc Collectorbase Gain Hfe Min
- 10
- Minimum Operating Temperature
- - 65 C
- Configuration
- Single
- Maximum Dc Collector Current
- 20 A
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