Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tip
- RF Bipolar Power
- Emitter Base Voltage Vebo
- 2.5 V
- Pd Power Dissipation
- 5 W
- Montaj Stili
- Through Hole
- Collector Emitter Voltage Vceo Max
- 17 V
- Ambalaj
- Tray
- Operating Frequency
- 500 MHz
- Kılıf / Paket
- Case244-04
- Continuous Collector Current
- 200 mA
- Maks. Çalışma Sıcaklığı
- + 200 C
- Technology
- Si
- Birim Ağırlık
- 0.429323 oz
- Transistor Type
- Bipolar Power
- Dc Collectorbase Gain Hfe Min
- 50
- Transistor Polarity
- NPN
- RoHS
- Details
- Minimum Operating Temperature
- - 65 C
- Ürün Tipi
- RF Bipolar Transistors
Related Products
Microsemi Corporation
0204-125
RF BJT Transistors
Microsemi Corporation
0510-50A
RF BJT Transistors
HARTING
09022326834
RF BJT Transistors
HARTING
09023646919
RF BJT Transistors
HARTING
09030006246
RF BJT Transistors
HARTING
09030006247
RF BJT Transistors
HARTING
09031466903
RF BJT Transistors
HARTING
09032322850222
RF BJT Transistors

