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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- Bipolar Power
- Risk Rank
- 5.6
- Polaritychannel Type
- NPN
- Transistor Polarity
- NPN
- Maks. Çalışma Sıcaklığı
- + 200 C
- RoHS
- Details
- Collector Currentmax Ic
- 2.5 A
- Emitter Base Voltage Vebo
- 4 V
- Configuration
- Single
- Ambalaj
- Tray
- Kılıf / Paket
- 211-07
- Dc Collectorbase Gain Hfe Min
- 5
- Tip
- RF Bipolar Power
- Operating Frequency
- 175 MHz
- Minimum Operating Temperature
- - 65 C
- Collector Emitter Voltage Vceo Max
- 18 V
- REACH Uyumluluk Kodu
- unknown
- Package Description
- ,
- Üretici Parça No
- MRF221
- Pd Power Dissipation
- 31 W
- Operating Temperaturemax
- 175 °C
- Part Life Cycle Code
- Active
- Transition Frequencynom Ft
- 175 MHz
- Power Dissipationmax Abs
- 31 W
- Technology
- Si
- Yüzey Montaj
- NO
- Continuous Collector Current
- 2.5 A
- Ihs Manufacturer
- ASI SEMICONDUCTOR INC
- Ürün Tipi
- RF Bipolar Transistors
- Montaj Stili
- Screw Mount
- Dc Current Gainmin Hfe
- 5
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