MRF172

Specifications

Polaritychannel Type

N-CHANNEL

Kılıf / Paket

211-07-3

Configuration

Single

Ambalaj

Tray

Qualification Status

Not Qualified

Rds On Drainsource Resistance

1.5 mOhms

Transistor Element Material

SILICON

Operating Temperaturemax

200 °C

Part Life Cycle Code

Active

Vgs Gatesource Voltage

40 V

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Üretici Parça No

MRF172

Terminal Pozisyonu

RADIAL

Minimum Operating Temperature

- 65 C

Gain

10 dB

Package Description

FLANGE MOUNT, O-CRFM-F4

Tip

RF Power MOSFET

Vds Drainsource Breakdown Voltage

65 V

Pin Sayısı

4

Output Power

80 W

Id Continuous Drain Current

9 A

Ds Breakdown Voltagemin

65 V

Yüzey Montaj

NO

Ihs Manufacturer

ASI SEMICONDUCTOR INC

RoHS

Details

Risk Rank

4.61

Transistor Polarity

N-Channel

Maks. Çalışma Sıcaklığı

+ 200 C

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Vgs Th Gatesource Threshold Voltage

5 V

Transistor Application

AMPLIFIER

Package Style

FLANGE MOUNT

Pd Power Dissipation

220 W

Drain Currentmax Id

9 A

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

unknown

Drain Currentmax Abs Id

9 A

Operating Frequency

200 MHz

Terminal Formu

FLAT