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Specifications
- Vgs Th Gatesource Threshold Voltage
- 5 V
- Pd Power Dissipation
- 500 W
- Vgs Gatesource Voltage
- 40 V
- Minimum Operating Temperature
- - 65 C
- RoHS
- Details
- Maks. Çalışma Sıcaklığı
- + 200 C
- Transistor Polarity
- N-Channel
- Operating Frequency
- 175 MHz
- Tip
- RF Power MOSFET
- Vds Drainsource Breakdown Voltage
- 125 V
- Kılıf / Paket
- SOT-262A
- Ambalaj
- Tray
- Configuration
- Dual
- Montaj Stili
- SMD/SMT
- Id Continuous Drain Current
- 40 A
- Ürün Tipi
- RF MOSFET Transistors
- Technology
- Si
- Birim Ağırlık
- 0.001058 oz
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