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MRF1004MB

RF BJT Transistors

RoHS: Compliant

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Specifications

Çalışma Sıcaklığı
-65°C ~ 175°C
Pd Power Dissipation
7 W
Terminal Sayısı
2
Minimum Operating Temperature
- 65 C
Güç (Watt)
0.125W, 1/8W
Collector Emitter Voltage Vceo Max
20 V
Boyut / Ölçü
0.094 Dia x 0.250 L (2.39mm x 6.35mm)
Tedarikçi Cihaz Paketi
Axial
Failure Rate
S (0.001%)
Direnç
8.35 kOhms
Operating Frequency
1090 MHz
Tip
RF Bipolar Power
Montaj Stili
SMD/SMT
Ürün Tipi
RF Bipolar Transistors
Tolerans
±0.5%
Technology
Si
Continuous Collector Current
250 mA
Composition
Metal Film
Özellikler
Military, Moisture Resistant, Weldable
Temperature Coefficient
±25ppm/°C
RoHS
Details
Transistor Type
Bipolar Power
Transistor Polarity
NPN
Seri
Military, MIL-PRF-55182/01, RNC55
Maks. Çalışma Sıcaklığı
+ 200 C
Kılıf / Paket
Axial
Dc Collectorbase Gain Hfe Min
10
Ambalaj
Bulk
Parça Durumu
Active
Emitter Base Voltage Vebo
3.5 V

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