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BLX15

RF BJT Transistors

RoHS: Compliant

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Specifications

Terminal Sayısı
2
Dc Collectorbase Gain Hfe Min
15
Direnç
1.5 Ohms
Boyut / Ölçü
0.085 Dia x 0.250 L (2.16mm x 6.35mm)
RoHS
Details
Emitter Base Voltage Vebo
4 V
Collector Emitter Voltage Vceo Max
55 V
Ürün Tipi
RF Bipolar Transistors
Pd Power Dissipation
233 W
Tip
RF Bipolar Power
Tolerans
±1%
Ambalaj
Tape & Reel (TR)
Failure Rate
S (0.001%)
Maximum Dc Collector Current
20 A
Kılıf / Paket
Axial
Transistor Polarity
NPN
Maks. Çalışma Sıcaklığı
+ 200 C
Seri
Military, MIL-PRF-39007, RWR81S
Temperature Coefficient
±50ppm/°C
Özellikler
Military, Moisture Resistant
Parça Durumu
Active
Technology
Si
Montaj Stili
Through Hole
Transistor Type
Bipolar Power
Minimum Operating Temperature
- 55 C
Güç (Watt)
1W
Operating Frequency
28 MHz
Çalışma Sıcaklığı
-55°C ~ 250°C
Tedarikçi Cihaz Paketi
Axial
Continuous Collector Current
10 A
Composition
Wirewound

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