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BLX13C

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Dc Collectorbase Gain Hfe Min
10
RoHS
Non-Compliant
Emitter Base Voltage Vebo
4 V
Technology
Si
Montaj Stili
Through Hole
Transistor Type
Bipolar Power
Ambalaj
Tray
Maximum Dc Collector Current
9 A
Collector Emitter Voltage Vceo Max
36 V
Pd Power Dissipation
73 W
Minimum Operating Temperature
- 65 C
Ürün Tipi
RF Bipolar Transistors
Tip
RF Bipolar Power
Fabrika Paket Adedi
1
Operating Frequency
28 MHz
Continuous Collector Current
3 A
Maks. Çalışma Sıcaklığı
+ 200 C
Transistor Polarity
NPN
Kılıf / Paket
SOT-120

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