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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- TIN LEAD
- Drain Currentmax Abs Id
- 8.5 A
- Power Dissipationmax Abs
- 265 W
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Operating Temperaturemax
- 200 °C
- Ihs Manufacturer
- BROADCOM LTD
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- RoHS
- Details
- Polaritychannel Type
- N-CHANNEL
- Package Body Material
- CERAMIC, METAL-SEALED COFIRED
- Part Life Cycle Code
- Active
- Drain Currentmax Id
- 8.5 A
- Number Of Terminals
- 2
- Reflow Temperaturemax S
- 30
- Ürün Tipi
- RF MOSFET Transistors
- Transistor Application
- AMPLIFIER
- Yüzey Montaj
- YES
- Case Connection
- SOURCE
- REACH Uyumluluk Kodu
- compliant
- Ds Breakdown Voltagemin
- 65 V
- Technology
- Si
- ECCN Kodu
- EAR99
- Package Shape
- RECTANGULAR
- Tepe Reflow Sıcaklığı (°C)
- 225
- Risk Rank
- 5.31
- Operating Mode
- ENHANCEMENT MODE
- Highest Frequency Band
- ULTRA HIGH FREQUENCY BAND
- JESD-609 Kodu
- e0
- Ambalaj
- Tray
- Jesd30 Code
- R-CDFM-F2
- Fabrika Paket Adedi
- 10
- Package Style
- FLANGE MOUNT
- Additional Feature
- HIGH RELIABILITY
- Üretici Parça No
- AGR09070EF
- Package Description
- FLANGE MOUNT, R-CDFM-F2
- Transistor Element Material
- SILICON
- Terminal Formu
- FLAT
- Configuration
- SINGLE
- Qualification Status
- Not Qualified
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