C2M0080120D

Teknik Özellikler

Tedarikçi Cihaz Paketi

TO-247-3

Package Shape

RECTANGULAR

Transistor Element Material

SILICON CARBIDE

JESD-609 Kodu

e3

RoHS Durumu

RoHS Compliant

Jesd30 Code

R-PSFM-T3

Package Description

HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Rds On Max

98 mΩ

Rohs Code

Yes

Configuration

SINGLE WITH BUILT-IN DIODE

Yükseklik

H = 4.08 ±0.25 mm

Montaj Tipi

Through Hole

Mounting Hole

8.75 ±0.08 mm

Thread Pitch

1.0

Power Dissipation Max

192W Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

C2M™

Inner Diameter

C = 8.72 mm

Package Body Material

PLASTIC/EPOXY

Ds Breakdown Voltagemin

1200 V

Drainsource On Resistancemax

0.098 Ω

Vgsth Max Id

4V @ 5mA

REACH Uyumluluk Kodu

compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

DRAIN

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Metal Thickness

1.2 mm

Drain Currentmax Id

36 A

Jedec95 Code

TO-247

Pulsed Drain Currentmax Idm

80 A

Transistor Application

SWITCHING

Pin Sayısı

3

Maks. Çalışma Sıcaklığı

150°C

Gate Charge Qg Max Vgs

62nC @ 5V

Input Capacitance Ciss Max Vds

950pF @ 1000V

Current Continuous Drain Id25

36A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Yüzey Montaj

NO

Rds On Max Id Vgs

98mOhm @ 20A, 20V

Turn On Delay Time

12 ns