NXPSC10650Q

Teknik Özellikler

Current Reverse Leakage Vr

250μA @ 650V

Diode Type

Silicon Carbide Schottky

Capacitance Vr F

300pF @ 1V 1MHz

Operating Temperature Junction

175°C Max

Nem Hassasiyeti (MSL)

Not Applicable

Parça Durumu

Discontinued

Reverse Recovery Time

0ns

Current Average Rectified Io

10A

Voltage Forward Vf Max If

1.7V @ 10A

Ambalaj

Tube

Kılıf / Paket

TO-220-2

Voltage Dc Reverse Vr Max

650V

Montaj Tipi

Through Hole

Speed

No Recovery Time > 500mA (Io)