SI7456DDP-T1-GE3

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Case Connection

DRAIN

Ds Breakdown Voltagemin

100 V

Pulsed Drain Currentmax Idm

70 A

Rohs Code

Yes

Terminal Kaplaması

MATTE TIN

Drain Currentmax Id

27.8 A

Drainsource On Resistancemax

0.023 Ω

REACH Uyumluluk Kodu

not_compliant

Part Life Cycle Code

Active

Avalanche Energy Rating Eas

11.2 mJ

Yüzey Montaj

YES

Transistor Element Material

SILICON

Package Description

HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Fabrika Tedarik Süresi

16 Weeks, 4 Days

Exterior Housing Material

1

ECCN Kodu

EAR99

Saturation Current

1

Polaritychannel Type

N-CHANNEL

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Package Style

SMALL OUTLINE

Terminal Formu

C BEND

Package Shape

RECTANGULAR

Terminal Pozisyonu

DUAL

Number Of Terminals

5

Jesd30 Code

R-PDSO-C5

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC