SI7431DP-T1-GE3

Teknik Özellikler

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

UNSPECIFIED

Terminal Pozisyonu

DUAL

Additional Feature

ULTRA-LOW RESISTANCE

Number Of Terminals

5

Jesd30 Code

R-XDSO-C5

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Power Dissipationmax Abs

5.4 W

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

P-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Package Description

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Exterior Housing Material

1

Fabrika Tedarik Süresi

13 Weeks

Saturation Current

1

Drain Currentmax Id

2.2 A

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.174 Ω

Avalanche Energy Rating Eas

45 mJ

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Yüzey Montaj

YES

Pulsed Drain Currentmax Idm

30 A

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn) - annealed

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

200 V

Case Connection

DRAIN