SI7414DN-T1-GE3

Teknik Özellikler

Pulsed Drain Currentmax Idm

30 A

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Case Connection

DRAIN

Ds Breakdown Voltagemin

60 V

Configuration

SINGLE WITH BUILT-IN DIODE

Saturation Current

1

Qualification Status

Not Qualified

Package Description

ROHS COMPLIANT, 1212-8, POWERPAK-8

Fabrika Tedarik Süresi

11 Weeks, 1 Day

Exterior Housing Material

1

ECCN Kodu

EAR99

Part Life Cycle Code

End Of Life

Avalanche Energy Rating Eas

18 mJ

Transistor Element Material

SILICON

Yüzey Montaj

YES

Drain Currentmax Id

5.6 A

Drainsource On Resistancemax

0.025 Ω

REACH Uyumluluk Kodu

compliant

Package Style

SMALL OUTLINE

Terminal Formu

C BEND

Operating Temperaturemax

150 °C

Package Shape

SQUARE

Operating Temperaturemin

-55 °C

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Polaritychannel Type

N-CHANNEL

Power Dissipationmax Abs

3.8 W

Tepe Reflow Sıcaklığı (°C)

260

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Jesd30 Code

S-XDSO-C5

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Number Of Terminals

5