SI7216DN-T1-GE3

Teknik Özellikler

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

40 V

Case Connection

DRAIN

JESD-609 Kodu

e3

Terminal Kaplaması

Matte Tin (Sn)

Rohs Code

Yes

Pulsed Drain Currentmax Idm

20 A

Drainsource On Resistancemax

0.032 Ω

REACH Uyumluluk Kodu

compliant

Drain Currentmax Id

6.5 A

Yüzey Montaj

YES

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

5 mJ

Part Life Cycle Code

Active

ECCN Kodu

EAR99

Exterior Housing Material

2

Package Description

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Qualification Status

Not Qualified

Saturation Current

1

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

20.8 W

Polaritychannel Type

N-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Transistor Application

SWITCHING

Package Shape

SQUARE

Operating Temperaturemax

150 °C

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Number Of Terminals

6

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

S-XDSO-C6

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC