SI7212DN-T1-GE3

Teknik Özellikler

Transistor Application

SWITCHING

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Package Shape

SQUARE

Operating Temperaturemax

150 °C

Power Dissipationmax Abs

2.6 W

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

UNSPECIFIED

Terminal Pozisyonu

DUAL

Number Of Terminals

6

Jesd30 Code

S-XDSO-C6

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

20 A

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

30 V

Case Connection

DRAIN

Package Description

ROHS COMPLIANT, 1212-8, POWERPAK-8

Qualification Status

Not Qualified

Exterior Housing Material

2

ECCN Kodu

EAR99

Saturation Current

1

Drain Currentmax Id

4.9 A

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.036 Ω

Avalanche Energy Rating Eas

5 mJ

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Yüzey Montaj

YES