SI7129DN-T1-GE3

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

S-XDSO-C5

Number Of Terminals

5

Terminal Pozisyonu

DUAL

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

40

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

52.1 W

Polaritychannel Type

P-CHANNEL

Package Shape

SQUARE

Operating Temperaturemax

150 °C

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Yüzey Montaj

YES

Avalanche Energy Rating Eas

31.25 mJ

Part Life Cycle Code

Active

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.0114 Ω

Drain Currentmax Id

35 A

Saturation Current

1

ECCN Kodu

EAR99

Exterior Housing Material

1

Package Description

HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

30 V

Case Connection

DRAIN

JESD-609 Kodu

e3

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn)

Rohs Code

Yes

Pulsed Drain Currentmax Idm

60 A