SI5419DU-T1-GE3

Teknik Özellikler

Saturation Current

1

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Jesd30 Code

R-PDSO-N3

Exterior Housing Material

1

Terminal Pozisyonu

DUAL

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polaritychannel Type

P-CHANNEL

Transistor Application

SWITCHING

Power Dissipationmax Abs

31 W

REACH Uyumluluk Kodu

compliant

JESD-609 Kodu

e3

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

NO LEAD

Drainsource On Resistancemax

0.02 Ω

Package Description

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, THIN, POWERPAK, CHIPFET-8

Drain Currentmax Id

12 A

Package Body Material

PLASTIC/EPOXY

Ds Breakdown Voltagemin

30 V

Case Connection

DRAIN

Operating Temperaturemax

150 °C

ECCN Kodu

EAR99

Number Of Terminals

3

Terminal Kaplaması

Matte Tin (Sn) - annealed

Pulsed Drain Currentmax Idm

40 A

Rohs Code

Yes

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Part Life Cycle Code

Active