SI4925BDY-T1-E3

Teknik Özellikler

Ds Breakdown Voltagemin

30 V

Operating Temperaturemax

150 °C

Number Of Terminals

8

Polaritychannel Type

P-CHANNEL

Saturation Current

1

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package Description

SOP-8

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Power Dissipationmax Abs

2 W

Package Shape

RECTANGULAR

Tepe Reflow Süresi (maks. sn)

30

Jesd30 Code

R-PDSO-G8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Drain Currentmax Id

5.3 A

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

compliant

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Qualification Status

Not Qualified

Terminal Kaplaması

Matte Tin (Sn)

HTS Kodu

8541.29.00.95

Exterior Housing Material

2

Part Life Cycle Code

Not Recommended

Rohs Code

Yes

Transistor Element Material

SILICON

Yüzey Montaj

YES

Drainsource On Resistancemax

0.025 Ω

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260