SI4838BDY-T1-GE3

Teknik Özellikler

Polaritychannel Type

N-CHANNEL

Operating Temperaturemax

150 °C

Number Of Terminals

8

Ds Breakdown Voltagemin

12 V

Power Dissipationmax Abs

5.7 W

Package Shape

RECTANGULAR

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Saturation Current

1

Configuration

SINGLE WITH BUILT-IN DIODE

Package Description

HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Package Style

SMALL OUTLINE

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

22.5 A

Jesd30 Code

R-PDSO-G8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Terminal Kaplaması

Matte Tin (Sn)

Package Body Material

PLASTIC/EPOXY

Transistor Element Material

SILICON

Part Life Cycle Code

Active

Rohs Code

Yes

Exterior Housing Material

1

Yüzey Montaj

YES

Jedec95 Code

MS-012AA

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.0027 Ω